Ferroelectric Thin Films for Tunable Microwave Applications

نویسندگان

  • Sebastjan Glinšek
  • Marija Kosec
  • Barbara Malič
چکیده

Modern wireless communication systems are based on microwave technologies. Ferroelectric devices with the electric field dependent dielectric properties and low dielectric losses at microwave frequencies are very promising. Capacitance tunability nc, defined as the ratio of the capacitance at zero applied bias voltage to the capacitance at some desired applied voltage, is the key functional property of ferroelectric materials. In order to avoid losses arising from the domain wall motion, these materials are mainly used in their paraelectric phase. [1]

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tunable Schottky Barrier in Photovoltaic BiFeO3 Based Ferroelectric Composite Thin Films

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...

متن کامل

KTa0.5Nb0.5O3 ferroelectric thin films: processing, characterization and application to microwave agile devices

This paper is aimed at demonstrating the high capabilities of KTa0.5Nb0.5O3 thin films for microwave agility applications. Tunable capacitors, resonators and phase shifters were realized with KTN materials. Their high frequency measurements showed, in particular, the very high tuning factors of these films under quite low electric field. Index Terms Ferroelectrics, Interdigital Capacitors, Phas...

متن کامل

Ferroelectric BaTiO3/SrTiO3 multilayered thin films for room-temperature tunable microwave elements

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric meas...

متن کامل

Switchable and tunable bulk acoustic wave resonators based on BaxSr1−xTiO3 thin films

The main focus of this thesis is the study of a novel microwave component, the tunable thin film bulk acoustic wave resonator (TFBAR), based on ferroelectric BaxSr1−xTiO3 thin films. Conventional fixed frequency TFBARs, widely used for filtering applications in wireless communication systems, are based on ordinary piezoelectrics. The tunable TFBAR on the other hand utilizes the dc field induced...

متن کامل

Oxide Thin Films for Tunable Microwave Devices

Oxide thin ®lms have been studied for frequency and phase agile electronics. The electric-®eld tuning of microwave devices employs ferroelectrics, while the Magnetic-®eld tuning uses ferrites. The critical material parameters for ferroelectric thin ®lms are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechan...

متن کامل

KTa0.6Nb0.4O3 ferroelectric thin film behavior at microwave frequencies for tunable applications.

In this study about the relationships between structural and microwave electrical properties of KTa(1-x)NbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electri...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2010